{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590175","patent":{"patent_number":"US-9590175","title":"Method for producing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-16T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"A semiconductor device includes four or more memory cells arranged on a row, the memory cells each including a first pillar-shaped semiconductor layer, a first gate insulating film around the semiconductor layer, a first gate line around the first gate insulating film, a third gate insulating film around an upper portion of the semiconductor layer, a first contact electrode around the third gate insulating film, a second contact electrode connecting upper portions of the semiconductor layer and the first contact electrode, and a magnetic tunnel junction storage element on the second contact electrode, a first source line connecting lower portions of the semiconductor layers to each other, a first bit line extending in a direction perpendicular to a direction of the first gate line and connected to an upper portion of the storage element, and a second source line extending in a direction perpendicular to the first source line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a semiconductor device","description":"A semiconductor device includes four or more memory cells arranged on a row, the memory cells each including a first pillar-shaped semiconductor layer, a first gate insulating film around the semicond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590175","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590175","citation_suggestion":"Patentable. \"Method for producing a semiconductor device\" (US-9590175). https://patentable.app/patents/US-9590175","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590175","json":"https://patentable.app/api/llm-context/US-9590175","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:53.061Z"}