{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595438","patent":{"patent_number":"US-9595438","title":"Method for producing a III/V Si template","assignee":null,"inventors":[],"filing_date":"2012-09-11T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method for producing a monolithic template comprises a Si wafer with a layer of a III/V semiconductor epitaxially applied to its surface. The III/V semiconductor has a lattice constant differing by less than 10% from that of Si. The method includes epitaxially growing a layer of a III/V semiconductor on the surface of the Si wafer at a wafer temperature from 350 to 650° C., a growth rate from 0.1 to 2 μm/h, and a layer thickness from 1 to 100 nm. A layer of another III/V semiconductor, identical to or different from the previously applied III/V semiconductor, is epitaxially grown on the III/V semiconductor layer at a wafer temperature from 500 to 800° C., a growth rate from 0.1 to 10 μm/h, and a layer thickness from 10 to 150 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a III/V Si template","description":"A method for producing a monolithic template comprises a Si wafer with a layer of a III/V semiconductor epitaxially applied to its surface. The III/V semiconductor has a lattice constant differing by ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595438","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595438","citation_suggestion":"Patentable. \"Method for producing a III/V Si template\" (US-9595438). https://patentable.app/patents/US-9595438","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595438","json":"https://patentable.app/api/llm-context/US-9595438","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:42:28.381Z"}