{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595443","patent":{"patent_number":"US-9595443","title":"Metal gate structure of a semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-10-20T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"The invention relates to integrated circuit fabrication, and more particularly to a metal gate structure. An exemplary structure for a CMOS semiconductor device comprises a substrate comprising an isolation region surrounding and separating a P-active region and an N-active region; a P-metal gate electrode over the P-active region and extending over the isolation region, wherein the P-metal gate electrode comprises a P-work function metal and an oxygen-containing TiN layer between the P-work function metal and substrate; and an N-metal gate electrode over the N-active region and extending over the isolation region, wherein the N-metal gate electrode comprises an N-work function metal and a nitrogen-rich TiN layer between the N-work function metal and substrate, wherein the nitrogen-rich TiN layer connects to the oxygen-containing TiN layer over the isolation region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal gate structure of a semiconductor device","description":"The invention relates to integrated circuit fabrication, and more particularly to a metal gate structure. An exemplary structure for a CMOS semiconductor device comprises a substrate comprising an iso","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595443","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595443","citation_suggestion":"Patentable. \"Metal gate structure of a semiconductor device\" (US-9595443). https://patentable.app/patents/US-9595443","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595443","json":"https://patentable.app/api/llm-context/US-9595443","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:52:14.602Z"}