{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595449","patent":{"patent_number":"US-9595449","title":"Silicon-germanium semiconductor devices and method of making","assignee":null,"inventors":[],"filing_date":"2015-12-21T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Oxidation treatment of a Si1-xGex (0<x<1) substrate forms on the substrate an interfacial layer comprised of silicon oxide and germanium oxide. The presence of germanium oxide in the interfacial layer is deleterious to the quality of the interfacial layer/Si1-xGex conducting channel as evidenced by an increase in charge interface states and a decrease in carrier mobility. Germanium oxide is scavenged from the interfacial layer in a scavenging step comprising heating the interfacial layer/substrate in a hydrogen-containing reducing atmosphere at a temperature of from about 450° C. to about 800° C. to reduce the germanium oxide content of the interfacial layer to not more than about 10% by weight, for example, not more than about 1% by weight, of the weight of the scavenged interfacial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-germanium semiconductor devices and method of making","description":"Oxidation treatment of a Si1-xGex (0<x<1) substrate forms on the substrate an interfacial layer comprised of silicon oxide and germanium oxide. The presence of germanium oxide in the interfacial layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595449","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595449","citation_suggestion":"Patentable. \"Silicon-germanium semiconductor devices and method of making\" (US-9595449). https://patentable.app/patents/US-9595449","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595449","json":"https://patentable.app/api/llm-context/US-9595449","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:49:46.672Z"}