{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595475","patent":{"patent_number":"US-9595475","title":"Multi-stage fin formation methods and structures thereof","assignee":null,"inventors":[],"filing_date":"2014-12-01T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor device having a multi-stage fin profile includes providing a substrate and forming a first spacer having a first spacer width over the substrate. The first spacer masks a first portion of the substrate during a first etch process. By way of example, the first etch process is performed on the substrate to form a first-stage fin region, where a width of the first-stage fin region is substantially equal to about the first spacer width. A second spacer having a second spacer width is formed over the substrate, where the second spacer and the first-stage fin region mask a second portion of the substrate during a second etch process. In some examples, the second etch process is performed on the substrate to form a second-stage fin region, where a width of the second-stage fin region is greater than the width of the first-stage fin region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-stage fin formation methods and structures thereof","description":"A method for fabricating a semiconductor device having a multi-stage fin profile includes providing a substrate and forming a first spacer having a first spacer width over the substrate. The first spa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595475","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595475","citation_suggestion":"Patentable. \"Multi-stage fin formation methods and structures thereof\" (US-9595475). https://patentable.app/patents/US-9595475","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595475","json":"https://patentable.app/api/llm-context/US-9595475","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:22:32.167Z"}