{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595476","patent":{"patent_number":"US-9595476","title":"Method for producing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-02-08T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L"],"num_claims":1,"abstract":"A semiconductor device includes first and second fin-shaped semiconductor layers on a substrate. First and second pillar-shaped semiconductor layers reside on the first and second fin-shaped semiconductor layers, respectively, where a width of the bottom of the first and second pillar-shaped semiconductors is equal to a width of the top of the first and second fin-shaped semiconductor layers, respectively. A gate insulating film and metal gate electrode are around underlying gate insulating layers on each fin-shaped semiconductor layer. A metal gate line is connected to the metal gate electrodes and extends in a direction perpendicular to the first and second fin-shaped semiconductor layers. Contacts reside on the upper portion of diffusion layers in upper portions of the first and second pillar-shaped semiconductor layers and are directly connected to the diffusion layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing semiconductor device and semiconductor device","description":"A semiconductor device includes first and second fin-shaped semiconductor layers on a substrate. First and second pillar-shaped semiconductor layers reside on the first and second fin-shaped semicondu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595476","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595476","citation_suggestion":"Patentable. \"Method for producing semiconductor device and semiconductor device\" (US-9595476). https://patentable.app/patents/US-9595476","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595476","json":"https://patentable.app/api/llm-context/US-9595476","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:47:12.063Z"}