{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595524","patent":{"patent_number":"US-9595524","title":"FinFET source-drain merged by silicide-based material","assignee":null,"inventors":[],"filing_date":"2014-12-05T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A method includes conducting a laser-based anneal treatment on a metal layer positioned above and in direct contact with a top portion of a silicon cap layer located in direct contact with a first diamond shaped epitaxial layer surrounding a first fin and a second diamond shaped epitaxial layer surrounding a second fin. The metal layer extends from the top portion of the silicon cap layer in direct contact with the first diamond shaped epitaxial layer to the top portion of the silicon cap layer in direct contact with the second diamond shaped epitaxial layer. The conducted laser-based anneal treatment forms a silicide layer, a portion of the silicide layer between the first and the second diamond shaped epitaxial layers is substantially thicker than a portion of the silicide layer in contact with the first and the second diamond shaped epitaxial layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET source-drain merged by silicide-based material","description":"A method includes conducting a laser-based anneal treatment on a metal layer positioned above and in direct contact with a top portion of a silicon cap layer located in direct contact with a first dia","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595524","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595524","citation_suggestion":"Patentable. \"FinFET source-drain merged by silicide-based material\" (US-9595524). https://patentable.app/patents/US-9595524","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595524","json":"https://patentable.app/api/llm-context/US-9595524","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:22:31.175Z"}