{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595532","patent":{"patent_number":"US-9595532","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-02-14T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An improvement is achieved in the performance of a semiconductor device having a nonvolatile memory. A memory cell of the nonvolatile memory includes a control gate electrode formed over a semiconductor substrate via a first insulating film and a memory gate electrode formed over the semiconductor substrate via a second insulating film to be adjacent to the control gate electrode via the second insulating film. The second insulating film includes a third insulating film made of a silicon dioxide film, a fourth insulating film made of a silicon nitride film over the third insulating film, and a fifth insulating film over the fourth insulating film. The fifth insulating film includes a silicon oxynitride film. Between the memory gate electrode and the semiconductor substrate, respective end portions of the fourth and fifth insulating films are located closer to a side surface of the memory gate electrode than an end portion of a lower surface of the memory gate electrode. Between the memory gate electrode and the semiconductor substrate, in a region where the second insulating film is not formed, another silicon dioxide film is embedded."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"An improvement is achieved in the performance of a semiconductor device having a nonvolatile memory. A memory cell of the nonvolatile memory includes a control gate electrode formed over a semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595532","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595532","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9595532). https://patentable.app/patents/US-9595532","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595532","json":"https://patentable.app/api/llm-context/US-9595532","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:45:47.798Z"}