{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595565","patent":{"patent_number":"US-9595565","title":"Memory structure","assignee":null,"inventors":[],"filing_date":"2016-04-18T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["G01N","H01L","H01L"],"num_claims":9,"abstract":"The present invention relates to a memory structure, which is a kind of resistive memory. A middle layer formed by a first dielectric film and a second dielectric film is included between the top and bottom electrodes. The material of the top electrode is iridium oxide. Thereby, preferred oxygen vacancy filament paths can be provided and thus exhibiting complementary resistive switching of memory arrays. Furthermore, the memory structure can be applied to biological tests."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory structure","description":"The present invention relates to a memory structure, which is a kind of resistive memory. A middle layer formed by a first dielectric film and a second dielectric film is included between the top and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595565","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595565","citation_suggestion":"Patentable. \"Memory structure\" (US-9595565). https://patentable.app/patents/US-9595565","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595565","json":"https://patentable.app/api/llm-context/US-9595565","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:42:34.146Z"}