{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595568","patent":{"patent_number":"US-9595568","title":"Semiconductor memory device having unequal pitch vertical channel transistors employed as selection transistors and method for programming the same","assignee":null,"inventors":[],"filing_date":"2016-06-13T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["G11C","G11C","H01L","G11C","G11C"],"num_claims":18,"abstract":"A semiconductor device comprises a set of selection transistors, such as in a three-dimensional memory structure or stack having resistance change memory cells arranged along vertical bit lines. Each selection transistor has a non-shared control gate and a shared control gate. The transistor bodies may have an unequal pitch and a common height. Some of the transistor bodies can be misaligned with the vertical bit lines to fit the transistors to the stack. A method for programming the three-dimensional memory structure includes forming one or two channels in a transistor body to provide a current to selected memory cells. Programming can initially use one channel and subsequently use two channels based on a programming progress. A method for fabricating a semiconductor device includes etching a gate conductor material so that shared and non-shared control gates have a common height."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device having unequal pitch vertical channel transistors employed as selection transistors and method for programming the same","description":"A semiconductor device comprises a set of selection transistors, such as in a three-dimensional memory structure or stack having resistance change memory cells arranged along vertical bit lines. Each ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595568","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595568","citation_suggestion":"Patentable. \"Semiconductor memory device having unequal pitch vertical channel transistors employed as selection transistors and method for programming the same\" (US-9595568). https://patentable.app/patents/US-9595568","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595568","json":"https://patentable.app/api/llm-context/US-9595568","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:28.477Z"}