{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595587","patent":{"patent_number":"US-9595587","title":"Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs","assignee":null,"inventors":[],"filing_date":"2014-04-23T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"Embodiments of the present disclosure provide a contact structure in a split-gate trench transistor device for electrically connecting the top electrode to the bottom electrode inside the trench. The transistor device comprises a semiconductor substrate and one or more trenches formed in the semiconductor substrate. The trenches are lined with insulating materials along the sidewalls inside the trenches. Each trench has a bottom electrode in lower portions of the trench and a top electrode in its upper portions. The bottom electrode and the top electrode are separated by an insulating material. A contact structure filled with conductive materials is formed in each trench in an area outside of an active region of the device to connect the top electrode and the bottom electrode. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs","description":"Embodiments of the present disclosure provide a contact structure in a split-gate trench transistor device for electrically connecting the top electrode to the bottom electrode inside the trench. The ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595587","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595587","citation_suggestion":"Patentable. \"Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs\" (US-9595587). https://patentable.app/patents/US-9595587","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595587","json":"https://patentable.app/api/llm-context/US-9595587","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:23:40.975Z"}