{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595589","patent":{"patent_number":"US-9595589","title":"Transistor with performance boost by epitaxial layer","assignee":null,"inventors":[],"filing_date":"2015-12-28T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a transistor device. In some embodiments, the transistor device has an epitaxial layer disposed over a substrate. The epitaxial layer is arranged between a source region and a drain region separated along a first direction. Isolation structures are arranged on opposite sides of the epitaxial layer along a second direction, perpendicular to the first direction. A gate dielectric layer is disposed over the epitaxial layer, and a conductive gate electrode is disposed over the gate dielectric layer. The epitaxial layer overlying the substrate improves the surface roughness of the substrate, thereby improving transistor device performance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor with performance boost by epitaxial layer","description":"The present disclosure relates to a transistor device. In some embodiments, the transistor device has an epitaxial layer disposed over a substrate. The epitaxial layer is arranged between a source reg","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595589","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595589","citation_suggestion":"Patentable. \"Transistor with performance boost by epitaxial layer\" (US-9595589). https://patentable.app/patents/US-9595589","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595589","json":"https://patentable.app/api/llm-context/US-9595589","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:29:10.204Z"}