{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595591","patent":{"patent_number":"US-9595591","title":"Semiconductor device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2013-11-22T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"One device includes a substrate which contains a well region of one conductivity type, an element isolation insulating film which is arranged within the well region, an island-shaped active region which is surrounded by the element isolation insulating film, two first gate structures which are arranged on the island-shaped active region, and each of which is configured by sequentially laminating a lower gate insulating film, a gate insulating film having a high dielectric constant, a first gate electrode film containing a metal material, and a second gate electrode film, and a second gate structure which includes a second gate electrode film that is in contact with and covers a part of the element isolation insulating film. The two first gate structures and the second gate structure are successively arranged in the order of one first gate structure, the second gate structure and the other first gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing same","description":"One device includes a substrate which contains a well region of one conductivity type, an element isolation insulating film which is arranged within the well region, an island-shaped active region whi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595591","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595591","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing same\" (US-9595591). https://patentable.app/patents/US-9595591","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595591","json":"https://patentable.app/api/llm-context/US-9595591","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:04:54.754Z"}