{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595592","patent":{"patent_number":"US-9595592","title":"Forming dual contact silicide using metal multi-layer and ion beam mixing","assignee":null,"inventors":[],"filing_date":"2015-12-30T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for forming contact silicide for a semiconductor structure. In one embodiment, a dielectric layer is formed over a p-type region of a semiconductor structure comprising a gate stack and source and drain regions. The source and drain regions are formed within a semiconductor layer. First and second contact trenches are formed within the dielectric layer exposing at least a portion of the source region and a portion of the drain region, respectively. First and second metal layers are formed within the first and second contact trenches. The second metal layer includes a metallic material that is different from a metallic material of the first meal layer. The metallic materials of the first and second metal layers in a lower region of the first and second contact trenches are intermixed. A silicide is formed within the source and drain regions from the semiconductor layer and the intermixed metallic materials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming dual contact silicide using metal multi-layer and ion beam mixing","description":"A method for forming contact silicide for a semiconductor structure. In one embodiment, a dielectric layer is formed over a p-type region of a semiconductor structure comprising a gate stack and sourc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595592","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595592","citation_suggestion":"Patentable. \"Forming dual contact silicide using metal multi-layer and ion beam mixing\" (US-9595592). https://patentable.app/patents/US-9595592","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595592","json":"https://patentable.app/api/llm-context/US-9595592","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:40:32.223Z"}