{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595597","patent":{"patent_number":"US-9595597","title":"Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain","assignee":null,"inventors":[],"filing_date":"2015-11-25T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A semiconductor device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The semiconductor fin includes a channel region formed of a first semiconductor material interposed between opposing embedded source/drain regions formed of a second semiconductor material different from the first semiconductor material. At least one gate stack is formed on the upper surface of the semiconductor substrate and wraps around the channel region. The embedded source/drain regions have a symmetrical shape and a uniform embedded interface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain","description":"A semiconductor device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The semiconductor fin includes a channel region formed of a first semiconductor materia","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595597","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595597","citation_suggestion":"Patentable. \"Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain\" (US-9595597). https://patentable.app/patents/US-9595597","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595597","json":"https://patentable.app/api/llm-context/US-9595597","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:56.584Z"}