{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9595608","patent":{"patent_number":"US-9595608","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-02-12T00:00:00.000Z","publication_date":"2017-03-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An n− drift region is disposed on the front surface of an n+ semiconductor substrate composed of a wide band gap semiconductor. A p-channel region is selectively disposed on the surface layer of the n− drift region. A high-concentration p+ base region is disposed so as to adjoin the lower portion of the p-channel region inside the n− drift region. Inside the high-concentration p+ base region, an n+ high-concentration region is selectively disposed at the n+ semiconductor substrate side. The n+ high-concentration region has a stripe-shaped planar layout extending to the direction that the high-concentration p+ base regions line up. The n+ high-concentration region adjoins a JFET region at one end portion in longitudinal direction of the stripe. Further, the n+ semiconductor substrate side of the n+ high-concentration region adjoins the part sandwiched between the high-concentration p+ base region and the n+ semiconductor substrate in the n− drift region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"An n− drift region is disposed on the front surface of an n+ semiconductor substrate composed of a wide band gap semiconductor. A p-channel region is selectively disposed on the surface layer of the n","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9595608","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9595608","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9595608). https://patentable.app/patents/US-9595608","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9595608","json":"https://patentable.app/api/llm-context/US-9595608","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:56:59.612Z"}