{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601314","patent":{"patent_number":"US-9601314","title":"Ion implantation apparatus and ion implantation method","assignee":null,"inventors":[],"filing_date":"2012-06-13T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ion implantation apparatus and ion implantation method","description":"An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes settin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601314","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601314","citation_suggestion":"Patentable. \"Ion implantation apparatus and ion implantation method\" (US-9601314). https://patentable.app/patents/US-9601314","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601314","json":"https://patentable.app/api/llm-context/US-9601314","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:58.142Z"}