{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601336","patent":{"patent_number":"US-9601336","title":"Trench field-effect device and method of fabricating same","assignee":null,"inventors":[],"filing_date":"2012-07-18T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"The present invention provides a method of fabricating a trench field-effect device. The method includes: providing a substrate including an epitaxial layer formed on a semiconductor substrate of the substrate and a trench formed in the epitaxial layer; forming a sacrificial dielectric layer on a bottom and a sidewall of the trench; forming a heavily-doped polysilicon region at the bottom, and removing part of the sacrificial dielectric layer not covered by the heavily-doped polysilicon region to expose an epitaxial layer of the sidewall; and oxidizing the heavily-doped polysilicon region and the epitaxial layer simultaneously and forming a thick oxide layer and a trench sidewall gate dielectric layer synchronously on the bottom and the sidewall, respectively; wherein thickness of the thick oxide layer is greater than that of the trench sidewall gate dielectric layer. The method is simple, and figure of merit of the fabricated trench field-effect device is reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench field-effect device and method of fabricating same","description":"The present invention provides a method of fabricating a trench field-effect device. The method includes: providing a substrate including an epitaxial layer formed on a semiconductor substrate of the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601336","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601336","citation_suggestion":"Patentable. \"Trench field-effect device and method of fabricating same\" (US-9601336). https://patentable.app/patents/US-9601336","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601336","json":"https://patentable.app/api/llm-context/US-9601336","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:00:11.486Z"}