{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601352","patent":{"patent_number":"US-9601352","title":"Method of localized annealing of semi-conducting elements using a reflective area","assignee":null,"inventors":[],"filing_date":"2015-09-21T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A method of making crystal semi-conducting material-based elements, including providing a support having amorphous semi-conducting material-based semi-conducting elements, the support being further provided with one or more components and with a reflective protective area configured so as to reflect a light radiation in a given wavelength range, exposing the element(s) to a laser radiation emitting in the given wavelength range so as to recrystallize the elements, the reflective protective area being arranged on the support relative to the elements and to the components so as to reflect the laser radiation and protect the components from this radiation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of localized annealing of semi-conducting elements using a reflective area","description":"A method of making crystal semi-conducting material-based elements, including providing a support having amorphous semi-conducting material-based semi-conducting elements, the support being further pr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601352","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601352","citation_suggestion":"Patentable. \"Method of localized annealing of semi-conducting elements using a reflective area\" (US-9601352). https://patentable.app/patents/US-9601352","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601352","json":"https://patentable.app/api/llm-context/US-9601352","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:27:24.965Z"}