{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601366","patent":{"patent_number":"US-9601366","title":"Trench formation for dielectric filled cut region","assignee":null,"inventors":[],"filing_date":"2015-07-27T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"A method for forming a gate cut region includes forming a tapered profile gate line trench through a hard mask, a dummy layer and a dummy dielectric formed on a substrate, forming a dummy gate dielectric and a dummy gate conductor in the trench and planarizing a top surface to reach the hard mask. The dummy gate conductor is patterned to form a cut trench in a cut region. The dummy gate conductor is recessed, and the cut trench is filled with a first dielectric material. The dummy layer is removed and spacers are formed. A gate line is opened up and the dummy gate conductor is removed from the gate line trench. A gate dielectric and conductor are deposited, and a gate cap layer provides a second dielectric that is coupled to the first dielectric material in the cut trench to form a cut last structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench formation for dielectric filled cut region","description":"A method for forming a gate cut region includes forming a tapered profile gate line trench through a hard mask, a dummy layer and a dummy dielectric formed on a substrate, forming a dummy gate dielect","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601366","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601366","citation_suggestion":"Patentable. \"Trench formation for dielectric filled cut region\" (US-9601366). https://patentable.app/patents/US-9601366","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601366","json":"https://patentable.app/api/llm-context/US-9601366","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:18:47.370Z"}