{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601379","patent":{"patent_number":"US-9601379","title":"Methods of forming metal source/drain contact structures for semiconductor devices with gate all around channel structures","assignee":null,"inventors":[],"filing_date":"2015-12-23T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"In one example, the method disclosed herein includes, among other things, forming a sacrificial structure around a plurality of stacked substantially un-doped nanowires at a location that corresponds to the channel region of the device, performing a selective etching process through a cavity to remove a second plurality of nanowires from the channel region and the source/drain regions of the device while leaving a first plurality of nanowires in position, and forming a metal conductive source/drain contact structure in each of the source/drain regions, wherein each of the metal conductive source/drain contact structures is positioned all around the first plurality of nanowires positioned in the source/drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming metal source/drain contact structures for semiconductor devices with gate all around channel structures","description":"In one example, the method disclosed herein includes, among other things, forming a sacrificial structure around a plurality of stacked substantially un-doped nanowires at a location that corresponds ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601379","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601379","citation_suggestion":"Patentable. \"Methods of forming metal source/drain contact structures for semiconductor devices with gate all around channel structures\" (US-9601379). https://patentable.app/patents/US-9601379","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601379","json":"https://patentable.app/api/llm-context/US-9601379","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:37:19.750Z"}