{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601383","patent":{"patent_number":"US-9601383","title":"FinFET fabrication by forming isolation trenches prior to fin formation","assignee":null,"inventors":[],"filing_date":"2015-11-16T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure for a FinFET in fabrication is provided, the structure including a bulk semiconductor substrate initially with a hard mask over the substrate. Isolation trenches between regions of the structure where the fins will be are formed prior to the fins, and filled with selectively removable sacrificial isolation material. Remains of the hard mask are removed and another hard mask formed over the structure with filled isolation trenches. Fins are then formed throughout the structure, including the regions of sacrificial isolation material, which is thereafter selectively removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET fabrication by forming isolation trenches prior to fin formation","description":"A semiconductor structure for a FinFET in fabrication is provided, the structure including a bulk semiconductor substrate initially with a hard mask over the substrate. Isolation trenches between regi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601383","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601383","citation_suggestion":"Patentable. \"FinFET fabrication by forming isolation trenches prior to fin formation\" (US-9601383). https://patentable.app/patents/US-9601383","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601383","json":"https://patentable.app/api/llm-context/US-9601383","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:23:38.825Z"}