{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601387","patent":{"patent_number":"US-9601387","title":"Method of making threshold voltage tuning using self-aligned contact cap","assignee":null,"inventors":[],"filing_date":"2014-01-03T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"Methods of forming a PFET dielectric cap with varying concentrations of H2 reactive gas and the resulting devices are disclosed. Embodiments include forming p-type and n-type metal gate stacks, each surrounded by SiN spacers; forming an ILD surrounding the SiN spacers; planarizing the ILD, the metal gate stacks, and the SiN spacers; determining at least one desired threshold voltage for the p-type metal gate stack; forming a first cavity in the p-type metal gate stack for each desired threshold voltage and a second cavity in the n-type metal gate stack; selecting a first nitride layer for each first cavity, the first nitride layer for each cavity having a concentration of hydrogen reactive gas based on the desired threshold voltage associated with the cavity; forming the first nitride layers in the respective first cavities; and forming a second nitride layer, with a hydrogen rich reactive gas, in the second cavity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of making threshold voltage tuning using self-aligned contact cap","description":"Methods of forming a PFET dielectric cap with varying concentrations of H2 reactive gas and the resulting devices are disclosed. Embodiments include forming p-type and n-type metal gate stacks, each s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601387","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601387","citation_suggestion":"Patentable. \"Method of making threshold voltage tuning using self-aligned contact cap\" (US-9601387). https://patentable.app/patents/US-9601387","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601387","json":"https://patentable.app/api/llm-context/US-9601387","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:15:34.954Z"}