{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601389","patent":{"patent_number":"US-9601389","title":"Method for local thinning of top silicon layer of SOI wafer","assignee":null,"inventors":[],"filing_date":"2016-08-10T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for local thinning of a top silicon layer of a SOI wafer includes the consecutive steps of: providing a SOI wafer which successively includes a bottom silicon layer, a buried oxide layer and a top silicon layer; successively forming a silicon dioxide layer and a polysilicon layer over the top silicon layer; etching the silicon dioxide layer and the polysilicon layer until a top surface of the top silicon layer is exposed, such that a pattern is formed in the silicon dioxide layer and the polysilicon layer; oxidizing the silicon dioxide layer and the polysilicon layer and concurrently oxidizing the exposed portion of the top silicon layer until the polysilicon layer has been completely converted to an oxide, thereby forming a cap oxide layer; and removing the cap oxide layer, so that a locally thinned area is formed in the top surface of the top silicon layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for local thinning of top silicon layer of SOI wafer","description":"A method for local thinning of a top silicon layer of a SOI wafer includes the consecutive steps of: providing a SOI wafer which successively includes a bottom silicon layer, a buried oxide layer and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601389","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601389","citation_suggestion":"Patentable. \"Method for local thinning of top silicon layer of SOI wafer\" (US-9601389). https://patentable.app/patents/US-9601389","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601389","json":"https://patentable.app/api/llm-context/US-9601389","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:21:40.500Z"}