{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601491","patent":{"patent_number":"US-9601491","title":"Vertical field effect transistors having epitaxial fin channel with spacers below gate structure","assignee":null,"inventors":[],"filing_date":"2016-05-04T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a vertical field effect transistor comprising that includes forming openings through a spacer material to provide fin structure openings to a first semiconductor material, and forming an inner spacer liner on sidewalls of the fin structure openings. A channel semiconductor material is epitaxially formed on a surface of the first semiconductor material filling at least a portion of the fin structure openings. The spacer material is recessed with an etch that is selective to the inner spacer liner to form a first spacer. The inner spacer liner is removed selectively to the channel semiconductor material. A gate structure on the channel semiconductor material, and a second semiconductor material is formed in contact with the channel semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical field effect transistors having epitaxial fin channel with spacers below gate structure","description":"A method of fabricating a vertical field effect transistor comprising that includes forming openings through a spacer material to provide fin structure openings to a first semiconductor material, and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601491","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601491","citation_suggestion":"Patentable. \"Vertical field effect transistors having epitaxial fin channel with spacers below gate structure\" (US-9601491). https://patentable.app/patents/US-9601491","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601491","json":"https://patentable.app/api/llm-context/US-9601491","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:00:25.401Z"}