{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601497","patent":{"patent_number":"US-9601497","title":"Static random access memory and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-04-28T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A Static Random Access Memory (SRAM) cell includes a first pull-up transistor and a first pull-down transistor, a second pull-up transistor and a second pull-down transistor, and first and second pass-gate transistors. A first buried contact electrically connects a drain region of the first pull-up transistor and gate electrodes of the second pull-up transistor and the second pull-down transistor, and includes a first metal layer formed in a region confined by spacers of a first gate layer and a first electrically conductive path formed at a level below the spacers. A second buried contact electrically connects a drain region of the second pull-up transistor and gate electrodes of the first pull-up transistor and the first pull-down transistor, and includes a second metal layer formed in a region confined by spacers of a second gate layer and a second electrically conductive path formed at the level below the spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Static random access memory and method of manufacturing the same","description":"A Static Random Access Memory (SRAM) cell includes a first pull-up transistor and a first pull-down transistor, a second pull-up transistor and a second pull-down transistor, and first and second pass","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601497","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601497","citation_suggestion":"Patentable. \"Static random access memory and method of manufacturing the same\" (US-9601497). https://patentable.app/patents/US-9601497","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601497","json":"https://patentable.app/api/llm-context/US-9601497","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:42:26.356Z"}