{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601502","patent":{"patent_number":"US-9601502","title":"Multiheight contact via structures for a multilevel interconnect structure","assignee":null,"inventors":[],"filing_date":"2016-07-15T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"A recessed region can be formed on a semiconductor substrate, and peripheral semiconductor devices can be formed on a recessed horizontal surface of the semiconductor substrate. An alternating stack of insulating layers and sacrificial material layers are formed over the semiconductor substrate, and memory stack structures are formed therethrough. Contact openings extending to sacrificial material layers located at different depths can be formed by sequentially exposing a greater number of openings in a mask layer by iterative alternation of trimming of a slimming layer over the mask layer and an anisotropic etch that recesses pre-existing contact openings by one level. Electrically conductive via structures extending to electrically conductive electrodes located at different level can be provided with self-aligned insulating liners."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multiheight contact via structures for a multilevel interconnect structure","description":"A recessed region can be formed on a semiconductor substrate, and peripheral semiconductor devices can be formed on a recessed horizontal surface of the semiconductor substrate. An alternating stack o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601502","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601502","citation_suggestion":"Patentable. \"Multiheight contact via structures for a multilevel interconnect structure\" (US-9601502). https://patentable.app/patents/US-9601502","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601502","json":"https://patentable.app/api/llm-context/US-9601502","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:09:22.989Z"}