{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601566","patent":{"patent_number":"US-9601566","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2012-11-19T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"A method for manufacturing a fin structure. The method includes: forming a first semiconductor layer and a second semiconductor layer sequentially on a substrate; patterning the second and first semiconductor layers to form an initial fin; selectively etching the first semiconductor layer of the initial fin so that the first semiconductor layer has a lateral recess; forming an isolation layer having a portion that fills the lateral recess, wherein the isolation layer, except the portion that fills the lateral recess, has a top surface lower than a top surface of the first semiconductor layer but higher than a bottom surface of the first semiconductor layer, and thus defines a fin above the isolation layer; and forming a gate stack intersecting the fin on the isolation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"A method for manufacturing a fin structure. The method includes: forming a first semiconductor layer and a second semiconductor layer sequentially on a substrate; patterning the second and first semic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601566","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601566","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-9601566). https://patentable.app/patents/US-9601566","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601566","json":"https://patentable.app/api/llm-context/US-9601566","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:50:43.047Z"}