{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601568","patent":{"patent_number":"US-9601568","title":"Semiconductor device including STI structure","assignee":null,"inventors":[],"filing_date":"2016-02-25T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Semiconductor devices including STI structures and their fabrication methods are provided. A mask layer is provided on a semiconductor substrate and patterned to form an opening in the mask layer to expose a surface portion of the semiconductor substrate. A trench is then formed in the semiconductor substrate by etching along the opening. A first dielectric layer is formed in the trench and has a top surface lower than a top surface of the semiconductor substrate to provide an uncovered sidewall surface of the trench in the semiconductor substrate. An epitaxial layer is formed on the uncovered sidewall surface of the trench in the semiconductor substrate. The epitaxial layer includes a spacing to expose a surface portion of the first dielectric layer. A second dielectric layer is formed on the exposed surface portion of the first dielectric layer to fill the spacing formed in the epitaxial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including STI structure","description":"Semiconductor devices including STI structures and their fabrication methods are provided. A mask layer is provided on a semiconductor substrate and patterned to form an opening in the mask layer to e","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601568","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601568","citation_suggestion":"Patentable. \"Semiconductor device including STI structure\" (US-9601568). https://patentable.app/patents/US-9601568","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601568","json":"https://patentable.app/api/llm-context/US-9601568","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:59:59.205Z"}