{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601570","patent":{"patent_number":"US-9601570","title":"Structure for reduced source and drain contact to gate stack capacitance","assignee":null,"inventors":[],"filing_date":"2016-07-31T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A structure of a semiconductor device is described. A device structure including a gate structure, a source region and a drain region is disposed on a first surface of a substrate. Contact holes are etched through the source and drain regions and through a first portion of the substrate. The contact holes are filled with a conductive material to produce contact studs coupled to the source and drain regions. A second portion of the substrate is removed. A surface of the contact studs is exposed through a second surface of the substrate opposite to the gate structure for connection to a wiring layer disposed over the second surface of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure for reduced source and drain contact to gate stack capacitance","description":"A structure of a semiconductor device is described. A device structure including a gate structure, a source region and a drain region is disposed on a first surface of a substrate. Contact holes are e","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601570","citation_suggestion":"Patentable. \"Structure for reduced source and drain contact to gate stack capacitance\" (US-9601570). https://patentable.app/patents/US-9601570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601570","json":"https://patentable.app/api/llm-context/US-9601570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:15:25.372Z"}