{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601573","patent":{"patent_number":"US-9601573","title":"Semiconductor device for reducing propagation time of gate input signals","assignee":null,"inventors":[],"filing_date":"2015-04-08T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":1,"abstract":"A gate pad is disposed on a semiconductor layer composed of an n+ type substrate, an n− type epitaxial layer, and a p− type body layer. The gate pad is disposed at the center portion of the semiconductor layer as viewed in plan. A plurality of unit cells that compose a trench type MOSFET element are provided in the semiconductor layer. The plurality of unit cells are arranged in the radial direction about the gate pad as viewed in plan. A gate electrode of a unit cell (center-side unit cell) that is proximate to the gate pad is electrically connected to the gate pad. Gate electrodes of unit cells that are adjacent to each other in the radial direction are connected to each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device for reducing propagation time of gate input signals","description":"A gate pad is disposed on a semiconductor layer composed of an n+ type substrate, an n− type epitaxial layer, and a p− type body layer. The gate pad is disposed at the center portion of the semiconduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601573","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601573","citation_suggestion":"Patentable. \"Semiconductor device for reducing propagation time of gate input signals\" (US-9601573). https://patentable.app/patents/US-9601573","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601573","json":"https://patentable.app/api/llm-context/US-9601573","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:57:17.003Z"}