{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601588","patent":{"patent_number":"US-9601588","title":"Method for fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-12-16T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"A method for fabricating a semiconductor device includes: forming isolation layers and active regions in a substrate, wherein each of the active regions is formed between the isolation layers; forming a silicide layer in each of the active regions; forming trenches and silicide layer patterns simultaneously by etching the silicide layer and each of the active regions, wherein each of the trenches is located between the silicide layer patterns; forming a buried gate in each of the trenches; forming an inter-layer dielectric layer that covers the buried gate and the silicide layer patterns; and forming a first opening that exposes one silicide layer pattern among the silicide layer patterns by selectively etching the inter-layer dielectric layer, wherein the silicide layer patterns are formed before the buried gate is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device","description":"A method for fabricating a semiconductor device includes: forming isolation layers and active regions in a substrate, wherein each of the active regions is formed between the isolation layers; forming","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601588","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601588","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device\" (US-9601588). https://patentable.app/patents/US-9601588","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601588","json":"https://patentable.app/api/llm-context/US-9601588","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:40:09.200Z"}