{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601595","patent":{"patent_number":"US-9601595","title":"High breakdown voltage LDMOS device","assignee":null,"inventors":[],"filing_date":"2015-12-14T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A multi-region (81, 83) lateral-diffused-metal-oxide-semiconductor (LDMOS) device (40) has a semiconductor-on-insulator (SOI) support structure (21) on or over which are formed a substantially symmetrical, laterally internal, first LDMOS region (81) and a substantially asymmetric, laterally edge-proximate, second LDMOS region (83). A deep trench isolation (DTI) wall (60) substantially laterally terminates the laterally edge-proximate second LDMOS region (83). Electric field enhancement and lower source-drain breakdown voltages (BVDSS) exhibited by the laterally edge-proximate second LDMOS region (83) associated with the DTI wall (60) are avoided by providing a doped SC buried layer region (86) in the SOI support structure (21) proximate the DTI wall (60), underlying a portion of the laterally edge-proximate second LDMOS region (83) and of opposite conductivity type than a drain region (31) of the laterally edge-proximate second LDMOS region (83)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High breakdown voltage LDMOS device","description":"A multi-region (81, 83) lateral-diffused-metal-oxide-semiconductor (LDMOS) device (40) has a semiconductor-on-insulator (SOI) support structure (21) on or over which are formed a substantially symmetr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601595","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601595","citation_suggestion":"Patentable. \"High breakdown voltage LDMOS device\" (US-9601595). https://patentable.app/patents/US-9601595","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601595","json":"https://patentable.app/api/llm-context/US-9601595","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:39:09.201Z"}