{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9601624","patent":{"patent_number":"US-9601624","title":"SOI based FINFET with strained source-drain regions","assignee":null,"inventors":[],"filing_date":"2014-12-30T00:00:00.000Z","publication_date":"2017-03-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of fabricating a semiconductor device where: (i) the fins are formed over a porous semiconductor material layer (for example, a silicon layer); and (ii) the porous semiconductor layer is then oxidized to form an insulator layer (for example, a SiO2 buried oxide layer). The pores in the porous semiconductor layer facilitate reliable oxidation of the insulator layer by allowing penetration of gaseous oxygen (O2) throughout the layer as it is oxidized to form the insulator layer. In some of these embodiments, a thin non-porous semiconductor layer is located over the porous semiconductor layer (prior to its oxidation) to allow strained epitaxial growth of material to be used in making source regions and drain regions of the finished semiconductor device (for example, a FINFET)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SOI based FINFET with strained source-drain regions","description":"A method of fabricating a semiconductor device where: (i) the fins are formed over a porous semiconductor material layer (for example, a silicon layer); and (ii) the porous semiconductor layer is then","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9601624","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9601624","citation_suggestion":"Patentable. \"SOI based FINFET with strained source-drain regions\" (US-9601624). https://patentable.app/patents/US-9601624","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9601624","json":"https://patentable.app/api/llm-context/US-9601624","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:07:47.464Z"}