{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9605342","patent":{"patent_number":"US-9605342","title":"Process gas management for an inductively-coupled plasma deposition reactor","assignee":null,"inventors":[],"filing_date":"2015-03-16T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process gas management for an inductively-coupled plasma deposition reactor","description":"Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9605342","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9605342","citation_suggestion":"Patentable. \"Process gas management for an inductively-coupled plasma deposition reactor\" (US-9605342). https://patentable.app/patents/US-9605342","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9605342","json":"https://patentable.app/api/llm-context/US-9605342","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:50:15.782Z"}