{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9605356","patent":{"patent_number":"US-9605356","title":"Method for selecting polycrystalline silicon rod, and method for producing single crystalline silicon","assignee":null,"inventors":[],"filing_date":"2012-04-04T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["G01N"],"num_claims":8,"abstract":"Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices <111>, <220>, <311> and <400>, the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for selecting polycrystalline silicon rod, and method for producing single crystalline silicon","description":"Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor dep","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9605356","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9605356","citation_suggestion":"Patentable. \"Method for selecting polycrystalline silicon rod, and method for producing single crystalline silicon\" (US-9605356). https://patentable.app/patents/US-9605356","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9605356","json":"https://patentable.app/api/llm-context/US-9605356","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:01:21.821Z"}