{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607663","patent":{"patent_number":"US-9607663","title":"Non-volatile dynamic random access memory (NVDRAM) with programming line","assignee":null,"inventors":[],"filing_date":"2015-08-11T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A memory circuit includes a first bit line, a second bit line, and a memory cell that is coupled to first bit line and the second bit line. The memory cell includes a capacitor, a first pass gate transistor, a non-volatile (NV) element, and a second pass gate transistor. The first capacitor has a first terminal coupled to a first storage node and a second terminal coupled to a reference. The first pass gate transistor is coupled between the first bit line and the first storage node. The NV element and a second pass gate transistor are coupled in series, wherein the first NV element and the second pass gate transistor are coupled between the first storage node and the first program line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile dynamic random access memory (NVDRAM) with programming line","description":"A memory circuit includes a first bit line, a second bit line, and a memory cell that is coupled to first bit line and the second bit line. The memory cell includes a capacitor, a first pass gate tran","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607663","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607663","citation_suggestion":"Patentable. \"Non-volatile dynamic random access memory (NVDRAM) with programming line\" (US-9607663). https://patentable.app/patents/US-9607663","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607663","json":"https://patentable.app/api/llm-context/US-9607663","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:30.802Z"}