{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607834","patent":{"patent_number":"US-9607834","title":"Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)","assignee":null,"inventors":[],"filing_date":"2016-04-01T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresist layer disposed above the antireflective coating layer. The method includes patterning the photoresist layer to expose a non-masked portion of the antireflective coating layer and selectively depositing a carbon-containing layer on the non-masked portions of the antireflective coating layer and on non-sidewall portions of the patterned photoresist layer. The method further includes etching the film stack to remove the carbon-containing layer and to remove a partial thickness of the non-masked portions of the antireflective coating layer without reducing a thickness of the photoresist layer. The method further includes repeating the selective depositing and etching, at least until the complete thickness of the non-masked portions of the antireflective coating layer is removed, to expose the underlying organic layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)","description":"A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607834","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607834","citation_suggestion":"Patentable. \"Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)\" (US-9607834). https://patentable.app/patents/US-9607834","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607834","json":"https://patentable.app/api/llm-context/US-9607834","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:16:40.246Z"}