{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607839","patent":{"patent_number":"US-9607839","title":"NLDMOS transistor and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-11-13T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"An N-type Lateral Diffused Metal-Oxide-Semiconductor (NLDMOS) transistor is provided. The NLDMOS transistor comprises a P-type substrate; and a semiconductor layer having a deep N-type well region formed on the P-type substrate. Further, the NLDMOS transistor also includes at least a P-type body region and an N-type drift region formed in the deep N-type well region; and an N-type heavily doped drain region formed in the N-type drift region. Further, the NLDMOS transistor includes a P-type doped reverse type region formed below the N-type drift region in the deep N-type well region, being physically connected with the first P-type body region, and preventing carriers from escaping between the N-type source region and external devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"NLDMOS transistor and fabrication method thereof","description":"An N-type Lateral Diffused Metal-Oxide-Semiconductor (NLDMOS) transistor is provided. The NLDMOS transistor comprises a P-type substrate; and a semiconductor layer having a deep N-type well region for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607839","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607839","citation_suggestion":"Patentable. \"NLDMOS transistor and fabrication method thereof\" (US-9607839). https://patentable.app/patents/US-9607839","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607839","json":"https://patentable.app/api/llm-context/US-9607839","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:53:54.900Z"}