{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607847","patent":{"patent_number":"US-9607847","title":"Enhanced lateral cavity etch","assignee":null,"inventors":[],"filing_date":"2015-12-18T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavity. The cavity may be formed under an electronic device in the semiconductor substrate. The cavity is formed in the substrate by performing a first cavity etch followed by repeated cycles of polymer deposition, cavity etch, and polymer removal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Enhanced lateral cavity etch","description":"A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607847","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607847","citation_suggestion":"Patentable. \"Enhanced lateral cavity etch\" (US-9607847). https://patentable.app/patents/US-9607847","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607847","json":"https://patentable.app/api/llm-context/US-9607847","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:59:39.284Z"}