{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607850","patent":{"patent_number":"US-9607850","title":"Self-aligned double spacer patterning process","assignee":null,"inventors":[],"filing_date":"2015-08-06T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including forming a first hard mask layer over a semiconductor device layer, forming a set of mandrels over the first hard mask layer, and forming a first spacer layer over the set of mandrels and the first hard mask layer. The method further includes forming a second spacer layer over the first spacer layer, patterning the first spacer layer and the second spacer layer to form a mask pattern, and patterning the first hard mask layer using the mask pattern as a mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned double spacer patterning process","description":"Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607850","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607850","citation_suggestion":"Patentable. \"Self-aligned double spacer patterning process\" (US-9607850). https://patentable.app/patents/US-9607850","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607850","json":"https://patentable.app/api/llm-context/US-9607850","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:22.812Z"}