{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607878","patent":{"patent_number":"US-9607878","title":"Shallow trench isolation and formation thereof","assignee":null,"inventors":[],"filing_date":"2013-11-04T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"One or more methods of forming shallow trench isolation (STI) and resulting semiconductor arraignments are provided. A method of forming STI includes forming a nitride liner in a first opening and second opening and recessing the nitride liner in the first opening and second opening while forming an oxide structure in the first opening and second opening, thus forming a first STI region in the first opening and a second STI region in the second opening. A semiconductor arraignment includes a first STI region in an active area and a second STI region in an isolation area, where a first recessed nitride layer height in the first STI region is different than a second recessed nitride layer height in the second STI region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Shallow trench isolation and formation thereof","description":"One or more methods of forming shallow trench isolation (STI) and resulting semiconductor arraignments are provided. A method of forming STI includes forming a nitride liner in a first opening and sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607878","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607878","citation_suggestion":"Patentable. \"Shallow trench isolation and formation thereof\" (US-9607878). https://patentable.app/patents/US-9607878","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607878","json":"https://patentable.app/api/llm-context/US-9607878","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:53:11.130Z"}