{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607884","patent":{"patent_number":"US-9607884","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-12-18T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Manufacturing stability of a semiconductor device is improved. A method of manufacturing a semiconductor device includes the steps of: forming an etching stopper film over a first interlayer insulating film; forming an inorganic insulating film over the etching stopper film; forming a resist film over the inorganic insulating film; selectively etching the etching stopper film and the inorganic insulating film by using the resist film as a mask to form a first opening in the etching stopper film and to form a second opening in the inorganic insulating film; removing the resist film by O2 plasma ashing; forming a second interlayer insulating film over the inorganic insulating film; and etching the second interlayer insulating film to form a wiring groove that is coupled to the second opening, and etching a portion located under the first opening of the first interlayer insulating film to form a via hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"Manufacturing stability of a semiconductor device is improved. A method of manufacturing a semiconductor device includes the steps of: forming an etching stopper film over a first interlayer insulatin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607884","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607884","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9607884). https://patentable.app/patents/US-9607884","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607884","json":"https://patentable.app/api/llm-context/US-9607884","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:47:04.159Z"}