{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607887","patent":{"patent_number":"US-9607887","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-02-25T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In one embodiment, a method of manufacturing a semiconductor device includes forming a convex portion including an interconnect and a first film above a substrate, forming a second film on the convex portion, and forming a concave portion having a first bottom face of the first film and a second bottom face lower than the upper face of the first film in the second film. The method further includes forming a polymer film in the concave portion by using a polymer that includes first and second portions respectively having first and second affinities for the first film, phase-separating the first and second portions to form a first pattern containing the first portion and located on the first bottom face and a second pattern containing the second portion and located on the second bottom face in the polymer film, and selectively removing the first or second pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"In one embodiment, a method of manufacturing a semiconductor device includes forming a convex portion including an interconnect and a first film above a substrate, forming a second film on the convex ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607887","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607887","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9607887). https://patentable.app/patents/US-9607887","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607887","json":"https://patentable.app/api/llm-context/US-9607887","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:31:09.545Z"}