{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607892","patent":{"patent_number":"US-9607892","title":"Method for forming a two-layered hard mask on top of a gate structure","assignee":null,"inventors":[],"filing_date":"2016-07-04T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"A method for fabricating semiconductor device comprising: providing a substrate having a gate structure thereon and a first interlayer dielectric (ILD) layer surrounding the gate structure; removing part of the gate structure; forming a first mask layer on the first ILD layer and the gate structure; removing the first mask layer on the first ILD layer and part of the first mask layer on the gate structure for forming a first hard mask on the gate structure; forming a second mask layer on the first ILD layer, the first hard mask, and the gate structure; and planarizing the second mask layer to form a second hard mask on the gate structure, in which the top surfaces of the first hard mask, the second hard mask, and the first ILD layer are coplanar."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming a two-layered hard mask on top of a gate structure","description":"A method for fabricating semiconductor device comprising: providing a substrate having a gate structure thereon and a first interlayer dielectric (ILD) layer surrounding the gate structure; removing p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607892","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607892","citation_suggestion":"Patentable. \"Method for forming a two-layered hard mask on top of a gate structure\" (US-9607892). https://patentable.app/patents/US-9607892","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607892","json":"https://patentable.app/api/llm-context/US-9607892","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:03:43.712Z"}