{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607895","patent":{"patent_number":"US-9607895","title":"Silicon via with amorphous silicon layer and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-05-27T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method is provided for fabricating a semiconductor structure. The method includes providing a substrate having an upper surface and a bottom surface; and forming a deep hole in the substrate from the upper surface. The method also includes forming an amorphous silicon layer on a side surface and a bottom surface of the deep hole to promote a preferred crystal orientation in subsequently formed layers. Further, the method includes forming a barrier layer having a preferred orientation along the (111) crystal face on the barrier layer. Further, the method also includes forming a metal layer having a preferred orientation along the (111) crystal face on the barrier layer to fill the through hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon via with amorphous silicon layer and fabrication method thereof","description":"A method is provided for fabricating a semiconductor structure. The method includes providing a substrate having an upper surface and a bottom surface; and forming a deep hole in the substrate from th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607895","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607895","citation_suggestion":"Patentable. \"Silicon via with amorphous silicon layer and fabrication method thereof\" (US-9607895). https://patentable.app/patents/US-9607895","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607895","json":"https://patentable.app/api/llm-context/US-9607895","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:00:45.086Z"}