{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607898","patent":{"patent_number":"US-9607898","title":"Simultaneously fabricating a high voltage transistor and a finFET","assignee":null,"inventors":[],"filing_date":"2016-02-16T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":1,"abstract":"Forming a semiconductor layer on a semiconductor substrate, a top surface of the semiconductor layer above a fin in a second region is higher than a top surface of the semiconductor layer in a first region, etching the semiconductor layer and a mask in the first region to expose a top surface of the semiconductor substrate to form a first stack, and etching the semiconductor layer and the mask in the second region to expose a top surface of the fin to form a second stack, epitaxially growing a semiconductor material on a top surface of the fin not covered by the second stack, recessing the first and second stack to expose a top surface of the semiconductor layer, a portion of the mask remains above the semiconductor layer in the first stack, top surfaces of each of the first and second stacks each are substantially flush with one another."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Simultaneously fabricating a high voltage transistor and a finFET","description":"Forming a semiconductor layer on a semiconductor substrate, a top surface of the semiconductor layer above a fin in a second region is higher than a top surface of the semiconductor layer in a first r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607898","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607898","citation_suggestion":"Patentable. \"Simultaneously fabricating a high voltage transistor and a finFET\" (US-9607898). https://patentable.app/patents/US-9607898","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607898","json":"https://patentable.app/api/llm-context/US-9607898","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:47:02.733Z"}