{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607904","patent":{"patent_number":"US-9607904","title":"Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices","assignee":null,"inventors":[],"filing_date":"2013-12-02T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"ALD of HfxAlyCz films using hafnium chloride (HfCl4) and Trimethylaluminum (TMA) precursors can be combined with post-deposition anneal processes and ALD liners to control the device characteristics in high-k metal-gate devices. Variation of the HfCl4 pulse time allows for control of the Al % incorporation in the HfxAlyCz film in the range of 10-13%. Combinatorial process tools can be employed for rapid electrical and materials characterization of various materials stacks. The effective work function (EWF) in metal oxide semiconductor capacitor (MOSCAP) devices with the HfxAlyCz work function layer coupled with ALD deposited HfO2 high-k gate dielectric layers was quantified to be mid-gap at ˜4.6 eV. Thus, HfxAlyCz is a promising metal gate work function material allowing for the tuning of device threshold voltages (Vth) for anticipated multi-Vth integrated circuit (IC) devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices","description":"ALD of HfxAlyCz films using hafnium chloride (HfCl4) and Trimethylaluminum (TMA) precursors can be combined with post-deposition anneal processes and ALD liners to control the device characteristics i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607904","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607904","citation_suggestion":"Patentable. \"Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices\" (US-9607904). https://patentable.app/patents/US-9607904","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607904","json":"https://patentable.app/api/llm-context/US-9607904","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:18:53.063Z"}