{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607954","patent":{"patent_number":"US-9607954","title":"Method of manufacturing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-05-14T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","G11C","G11C","H01L","H01L","H01L","H01L","H01L","H01L","G11C","G11C","G11C","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Object is to prevent a coupling failure between a rewiring and a coupling member for coupling to outside. A passivation film and a first polyimide film are formed so as to cover a wiring layer. A first opening portion is formed in the first polyimide film. A rewiring is formed on the first polyimide film so as to be coupled to the wiring layer via the first opening portion. A second polyimide film that covers the rewiring and has a second opening portion communicated with the rewiring is formed. A palladium film is formed as a barrier film by sputtering on a portion of the surface of the rewiring at which the second opening portion exists. A solder ball is coupled to the palladium film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device and semiconductor device","description":"Object is to prevent a coupling failure between a rewiring and a coupling member for coupling to outside. A passivation film and a first polyimide film are formed so as to cover a wiring layer. A firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607954","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607954","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device and semiconductor device\" (US-9607954). https://patentable.app/patents/US-9607954","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607954","json":"https://patentable.app/api/llm-context/US-9607954","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:52:04.006Z"}