{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607962","patent":{"patent_number":"US-9607962","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-01-28T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A semiconductor device includes a corner constituted by a first side and a second side being perpendicular to the first side; and a plurality of pads including a first pad, arranged along the second side and formed over a semiconductor substrate. The first pad is arranged nearer the corner than other pads of the plurality of pads. The first pad includes a third side, a fourth side being perpendicular to the third side, a fifth side being parallel to the third side and a sixth side being perpendicular to a fifth side. The third side and the fourth side are nearer to the corner than the fifth side and sixth side. A first dummy wiring is formed along the first side. A second dummy wiring is formed along the second side. The first dummy wiring and the second dummy wiring are formed integrally with each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device includes a corner constituted by a first side and a second side being perpendicular to the first side; and a plurality of pads including a first pad, arranged along the second s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607962","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607962","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9607962). https://patentable.app/patents/US-9607962","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607962","json":"https://patentable.app/api/llm-context/US-9607962","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:03:36.692Z"}